Especificaciones
Category :
Discrete Semiconductor Products Transistors Bipolar (BJT) Single, Pre-Biased Bipolar Transistors
Current - Collector (Ic) (Max) :
500 mA
Product Status :
Obsolete
Transistor Type :
PNP - Pre-Biased
Mounting Type :
Through Hole
Package :
Tape & Box (TB)
Series :
-
Vce Saturation (Max) @ Ib, Ic :
300mV @ 2.5mA, 50mA
Voltage - Collector Emitter Breakdown (Max) :
50 V
Supplier Device Package :
TO-92-3
Resistor - Base (R1) :
1 kOhms
Mfr :
NXP USA Inc.
Resistor - Emitter Base (R2) :
10 kOhms
Current - Collector Cutoff (Max) :
500nA
Power - Max :
500 mW
Package / Case :
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
DC Current Gain (hFE) (Min) @ Ic, Vce :
70 @ 50mA, 5V
Base Product Number :
PDTB113
Description :
TRANS PREBIAS PNP 500MW TO92-3
Stock :
In Stock
Shipping Method :
LCL, AIR, FCL, Express
Payment Terms :
L/C, D/A, D/P, T/T, Western Union, MoneyGram
Descripción
Transistor bipolar Pre-en polarización negativa (BJT) PNP - 50 V Pre-en polarización negativa 500 mA 500 mW a través del agujero TO-92-3
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PDTB113ZS, 126

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Category :
Discrete Semiconductor Products Transistors Bipolar (BJT) Single, Pre-Biased Bipolar Transistors
Current - Collector (Ic) (Max) :
500 mA
Product Status :
Obsolete
Transistor Type :
PNP - Pre-Biased
Mounting Type :
Through Hole
Package :
Tape & Box (TB)
Proveedor de contacto
PDTB113ZS, 126

Beijing Silk Road Enterprise Management Services Co.,LTD

Verified Supplier
3 Años
Tipo de empresa :
Manufacturer, Distributor/Wholesaler, Agent, Importer, Exporter
Número de empleados :
100~120
Nivel de certificación :
Verified Supplier
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